公开(公告)号：US20240282377A1

公开(公告)日：2024-08-22

申请号：US18441331

申请日：2024-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chaehyeon LIM ,  Woojae JANG ,  Sejun PARK ,  Yujeong SEO ,  Jaeduk LEE

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/32

CPC classification number: G11C16/08 ,  G11C16/0433 ,  G11C16/32

Abstract: Provided is an operating method of a nonvolatile memory device including a plurality of cell strings, each cell string of the plurality of cell strings including a plurality of memory cells, connected between a bit line and a common source line, and vertical holes penetrating a plurality of word lines stacked in a direction perpendicular to a substrate, the operating method including applying a word line voltage to the plurality of word lines, classifying the plurality of word lines into a plurality of regions, each region of the plurality of regions including at least one of the word lines, and recovering voltages of the plurality of word lines by recovering voltages of word lines arranged in a central region among the plurality of regions before recovering voltages of word lines in other regions of the plurality of regions.