公开(公告)号：US11599302B2

公开(公告)日：2023-03-07

申请号：US16829660

申请日：2020-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Woo Lee ,  Chan Ha Kim ,  Kang Ho Roh ,  Kwang Woo Lee ,  Hee Won Lee

IPC: G06F12/00 ,  G06F3/06 ,  G06F11/07 ,  G06F11/30 ,  G06F9/455 ,  G06K9/62 ,  G06N20/00

Abstract: A storage device, including a feature information database configured to store feature information about a memory device; and a machine learning module configured to select a machine learning model from a plurality of machine learning models the corresponding to an operation of the memory device based on the feature information, wherein the memory device is configured to operate according to the selected machine learning model.

公开(公告)号：US11430523B2

公开(公告)日：2022-08-30

申请号：US17036430

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo Hong ,  Chan Ha Kim ,  Yun Jung Lee

IPC: G06F12/00 ,  G11C16/14 ,  G06F12/02 ,  G06F12/0882 ,  G06K9/62 ,  G06N3/04 ,  G11C16/26 ,  G11C16/34 ,  G11C29/42 ,  G11C29/44

Abstract: A storage device is provided. The storage device includes a nonvolatile memory device including a first block and a second block, and a controller including processing circuitry configured to, predict a number of writes to be performed on the nonvolatile memory device using a machine learning model, determine a type of reclaim command based on the predicted number of writes, the reclaim command for reclaiming data of the first block to the second block, and issue the reclaim command.

公开(公告)号：US11189354B2

公开(公告)日：2021-11-30

申请号：US16826558

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang Woo Lee ,  Chan Ha Kim ,  Hee Won Lee

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/14 ,  G11C16/26

Abstract: A nonvolatile memory device capable of minimizing monitoring overhead associated with read disturb is provided. The nonvolatile memory device includes a memory cell array which includes a first cell string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells includes a first monitoring cell, a first memory cell, and a second memory cell, and a row decoder which provides a first read voltage to the first memory cell and a first monitoring voltage to the first monitoring cell when reading the first memory cell among the memory cells and provides the first read voltage to the second memory cell and a second monitoring voltage different from the first monitoring voltage to the first monitoring cell when reading the second memory cell.

公开(公告)号：US20210057033A1

公开(公告)日：2021-02-25

申请号：US16826558

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang Woo Lee ,  Chan Ha Kim ,  Hee Won Lee

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/08 ,  G11C16/14

Abstract: A nonvolatile memory device capable of minimizing monitoring overhead associated with read disturb is provided. The nonvolatile memory device includes a memory cell array which includes a first cell string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells includes a first monitoring cell, a first memory cell, and a second memory cell, and a row decoder which provides a first read voltage to the first memory cell and a first monitoring voltage to the first monitoring cell when reading the first memory cell among the memory cells and provides the first read voltage to the second memory cell and a second monitoring voltage different from the first monitoring voltage to the first monitoring cell when reading the second memory cell.