Abstract:
A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.
Abstract:
A storage device is provided. The storage device includes a nonvolatile memory device including a first block and a second block, and a controller including processing circuitry configured to, predict a number of writes to be performed on the nonvolatile memory device using a machine learning model, determine a type of reclaim command based on the predicted number of writes, the reclaim command for reclaiming data of the first block to the second block, and issue the reclaim command.
Abstract:
A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.
Abstract:
A dryer according to the present disclosure may be a dryer to which a heat pump system is applied, and may provide a structure in which constant temperature external air is suctioned and supplied to a drum to maintain constant performance of the dryer. An air supply unit configured to supply hot dry air to the drum is isolated from an inside of the main body such that internal air including a foreign material is not introduced into the air supply unit, and a suction port cover is separably coupled to the dryer such that a foreign material introduced with the external air is easily removed.
Abstract:
A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.
Abstract:
An indoor unit of an air conditioner having improved structures of suction, discharge and/or flow passages which may increase operation efficiency, reduce noises and realize a compact size. The indoor unit includes a housing comprising a front panel and a rear panel coupled to a rear portion of the front panel, at least one discharge outlet exposed to a front of the front panel, at least one suction inlet formed in the rear panel at a position corresponding to the discharge outlet, at least one heat exchanger disposed at a front portion of the suction inlet to absorb heat from air introduced through the suction inlet or transfer heat to the air introduced through the suction inlet, and at least one diagonal flow fan disposed between the heat exchanger and the discharge outlet to suction air passing through the heat exchanger and discharge the air through the discharge outlet.
Abstract:
A drying apparatus is disclosed. The drying apparatus comprises: a drum; a compressor for compressing a refrigerant; a first temperature sensor provided at an air discharge port of the drum; a second temperature sensor provided at a refrigerant discharge port of the compressor; and a processor which, when a drying cycle for an object to be dried begins, compares a first temperature sensed by the first temperature sensor with a predetermined threshold temperature so as to obtain an operation frequency of the compressor, and when a second temperature sensed by the second temperature sensor reaches a predetermined first target temperature, adjusts the operation frequency of the compressor on the basis of a third temperature calculated on the basis of the first temperature and the second temperature.
Abstract:
A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.
Abstract:
Disclosed herein is an air conditioner equipped with a stabilizer having an improved structure to reduce air-blowing noise. The air conditioner includes a main body having a suction port and a discharge port; a heat exchanger provided in the main body. A crossflow fan is configured to discharge air heat-exchanged by the heat exchanger to the discharge port. A stabilizer is located adjacent to the crossflow fan and comprises a guide section having a first guide portion configured to guide airflow flowing in the main body by the crossflow fan to a suction region and a second guide portion configured to guide the airflow to a discharge region. A flow separation section is connected to the guide section, wherein a location of the flow separating section varies in an axial direction of the crossflow fan and in a rotational direction of the crossflow fan.