公开(公告)号：US20220406844A1

公开(公告)日：2022-12-22

申请号：US17568866

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chungman KIM ,  Bonwon KOO ,  Dongho AHN ,  Kiyeon YANG ,  Zhe WU ,  Chang Seung LEE

IPC: H01L27/24 ,  H01L45/00

Abstract: A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.

公开(公告)号：US20160197122A1

公开(公告)日：2016-07-07

申请号：US14794532

申请日：2015-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Satoh RYUICHI ,  Kyu Sik KIM ,  Woo Young YANG ,  Yeon-Hee KIM ,  Yong-Young PARK ,  Xianyu WENXU ,  Chang Seung LEE ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/107 ,  H01L2251/303

Abstract: Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where light enters, a second light-transmitting electrode opposite to the first light-transmitting electrode, an active layer between the first and second light-transmitting electrodes, and an ultraviolet (UV) ray blocking layer on the first light-transmitting electrode, wherein the ultraviolet (UV) ray blocking layer includes at least one metal oxide having a light transmittance of less than or equal to about 75% for light of less than or equal to about 380 nm.

Abstract translation: 包括有机光电子器件的有机光电子器件和图像传感器包括在光入射侧的第一透光电极，与第一透光电极相对的第二透光电极，在第一和第二光之间的有源层 - 透射电极和在第一透光电极上的紫外（UV）光线阻挡层，其中紫外线（UV）光线阻挡层包括至少一种具有小于或等于约75％的透光率的金属氧化物，用于 小于或等于约380nm的光。