Abstract:
Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where light enters, a second light-transmitting electrode opposite to the first light-transmitting electrode, an active layer between the first and second light-transmitting electrodes, and an ultraviolet (UV) ray blocking layer on the first light-transmitting electrode, wherein the ultraviolet (UV) ray blocking layer includes at least one metal oxide having a light transmittance of less than or equal to about 75% for light of less than or equal to about 380 nm.