公开(公告)号：US20160293697A1

公开(公告)日：2016-10-06

申请号：US15058466

申请日：2016-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Woo KIM ,  Shigenobu MAEDA ,  Young-Moon CHOI ,  Yong-Bum KWON ,  Chang-Woo SOHN ,  Do-Sun LEE

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/161 ,  H01L23/528 ,  H01L29/16 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L21/823431 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

Abstract translation: 半导体器件可以包括多个有源散热片，每个有源散热片各自在衬底上沿第一方向延伸，栅极结构在第二方向上在有源鳍片上延伸;以及第一源/漏极层，位于邻近栅极的有源散热片的第一有源散热片上 结构体。 沿着第二方向截取的第一源/漏层的横截面的两个相对的侧壁中的至少一个可以包括相对于衬底的上表面具有斜率的弯曲部分。 斜面可能从底部向其顶部减小。