Abstract:
Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.
Abstract:
A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.
Abstract:
A memory device, a host device and a memory system are provided. The memory device may include a plurality of storage units configured to store data, and at least one device controller configured to, receive a read command from at least one host device and to read data stored in the plurality of storage units in response to the read command, the at least one host device including at least one host memory including a plurality of HPB (high performance boosting) entry storage regions, and provide the at least one host device with a response command, the response command indicating an activation or deactivation of the plurality of HPB entry storage regions, the response command including HPB entry type information which indicates a HPB entry type of the HPB entry storage region.
Abstract:
A semiconductor device includes a first fin on a substrate, a gate electrode on the substrate to intersect the first fin, an epitaxial layer on both sides of the gate electrode to contact side surfaces of the first fin, and a metal alloy layer which contacts an upper surface of the first fin and part of the epitaxial layer, wherein a first region of the first fin has a higher doping concentration than a second region of the first fin which is located under the first region.
Abstract:
An electronic device and a method of operating an electronic device are provided. The method includes determine a motion of an electronic pen received in a pen storage unit of the electronic device; in response to the motion of the electronic pen, determining information related to the motion of the electronic pen; and executing at least one function corresponding to the information related to the detected motion of the electronic pen.
Abstract:
According to an embodiment of the present disclosure, an image capturing optical system includes a first lens group having a positive refractive power and disposed along an optical axis and to face an object. A second lens group has a negative refractive power and disposed along the optical axis and adjacent to the first lens group, and second lens group includes a focus correction lens to correct a difference in a focused position according to a variation in a position of the object. A third lens group has a positive refractive power and disposed along the optical axis. A subsequent lens group adjacent the third lens group and disposed along the optical axis and to face an image of the object, and the lens group subsequent to the second lens group includes a camera shake correction lens to move in a direction perpendicular to the optical axis.
Abstract:
Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.
Abstract:
A method and apparatus for controlling a touch-key operation are provided, in which upon generation of an input event from an electronic pen, at least one touch key is deactivated, and upon generation of a hovering event in a predetermined area of the touch screen from the electronic pen, a predetermined touch key corresponding to the predetermined area is activated from among the at least one deactivated touch key.
Abstract:
A memory system includes a storage device including a nonvolatile memory device and a storage controller configured to control the nonvolatile memory device, and a host that accesses the storage device. The storage device transfers map data, in which a physical address of the nonvolatile memory device and a logical address provided from the host are mapped, to the host depending on a request of the host. The host stores and manages the transferred map data as map cache data. The map cache data are managed depending on a priority that is determined based on a corresponding area of the nonvolatile memory device.
Abstract:
A method and an apparatus for controlling an amount of light in a visible light communication system are provided. In the visible light communication system, a terminal measures an amount of light for a light signal received from a sensor, determines whether the measured amount of light is less than a threshold value, increases an amount of light for a light source signal to transmit to the sensor when the measured amount of light is less than the threshold value, and transmits, to the sensor, a light source signal according to the increased amount of light.