公开(公告)号：US20170345710A1

公开(公告)日：2017-11-30

申请号：US15407628

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-oh PARK ,  Sang-chul SHIN ,  Chang-hwan KIM ,  Ji-young KIM

IPC: H01L21/768 ,  H01L23/522 ,  G11C8/08 ,  G03F7/095 ,  G11C7/06 ,  G03F7/20 ,  H01L23/528 ,  H01L21/027

CPC classification number: H01L21/76816 ,  G03F7/0035 ,  G03F7/095 ,  G03F7/2022 ,  G03F7/2041 ,  G11C7/06 ,  G11C8/08 ,  H01L21/0274 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528

Abstract: A method of forming a pattern of a semiconductor device includes: forming a first mask pattern comprising first mask lines extending in a first direction in a cell region and second mask lines extending in the first direction in a first core region, the first mask pattern covering a second core region; forming, on the first mask pattern, a second mask pattern comprising third mask lines extending in a second direction in the cell region and fourth mask lines extending in the second direction in the second core region, the second mask pattern covering the first core region; and forming a third mask pattern by using the second mask pattern, the third mask pattern comprising island-type masks in the cell region, fifth mask lines extending in the first direction in the first core region, and sixth mask lines extending in the second direction in the second core region.