公开(公告)号：US20250072087A1

公开(公告)日：2025-02-27

申请号：US18583269

申请日：2024-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungwook PARK ,  Sangmin KANG ,  Changwoo SEO ,  Suyoun SONG ,  Dain LEE

IPC: H01L29/417 ,  H01L23/528

Abstract: A semiconductor device may include first and second active patterns, each including a center portion and an edge portion, the center portion of the first active pattern and the edge portion of the second active pattern adjacent to each other, a device isolation pattern between the first and second active patterns, a bit line node contact on the center portion of the first active pattern, a bit line on the bit line node contact, a storage node contact on the edge portion of the second active pattern, a bit line spacer between the bit line and the storage node contact, and a gapfill insulating pattern between a lower portion of the bit line spacer and the storage node contact. The center portion of the first active pattern may include a center oxide region in an upper portion thereof.

公开(公告)号：US20220093387A1

公开(公告)日：2022-03-24

申请号：US17222195

申请日：2021-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dain LEE ,  Yoongoo KANG ,  Wonseok YOO ,  Jinwon MA ,  Kyungwook PARK ,  Changwoo SEO ,  Suyoun SONG

IPC: H01L21/02 ,  C23C16/455

Abstract: A semiconductor device manufacturing method includes loading a semiconductor substrate into a chamber, the semiconductor substrate including a silicon oxide film, depositing a seed layer on the silicon oxide film by supplying a first silicon source material, supplying a purge gas on the seed layer, depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material layer and subsequently supplying the first silicon source material, and depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material.