公开(公告)号：US20220093387A1

公开(公告)日：2022-03-24

申请号：US17222195

申请日：2021-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dain LEE ,  Yoongoo KANG ,  Wonseok YOO ,  Jinwon MA ,  Kyungwook PARK ,  Changwoo SEO ,  Suyoun SONG

IPC: H01L21/02 ,  C23C16/455

Abstract: A semiconductor device manufacturing method includes loading a semiconductor substrate into a chamber, the semiconductor substrate including a silicon oxide film, depositing a seed layer on the silicon oxide film by supplying a first silicon source material, supplying a purge gas on the seed layer, depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material layer and subsequently supplying the first silicon source material, and depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material.

公开(公告)号：US20200119021A1

公开(公告)日：2020-04-16

申请号：US16711833

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwon MA ,  Jun-Noh Lee ,  Dong-Hyun IM ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/485

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.

公开(公告)号：US20190148383A1

公开(公告)日：2019-05-16

申请号：US16245307

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon MA ,  JUN-NOH LEE ,  DONG-HYUN IM ,  YOUNGSEOK KIM ,  KONGSOO LEE

IPC: H01L27/108 ,  H01L21/768

CPC classification number: H01L27/10888 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53271 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/10885

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.

公开(公告)号：US20170345824A1

公开(公告)日：2017-11-30

申请号：US15603668

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon MA ,  Jun-Noh Lee ,  Dong-Hyun Im ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768

CPC classification number: H01L27/10888 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76895 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/10885

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.