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公开(公告)号：US12230671B2
公开(公告)日：2025-02-18
申请号：US17412393
申请日：2021-08-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Min Park , Han Jin Lim , Kyoo Ho Jung , Cheol Jin Cho
Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
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公开(公告)号：US20220238641A1
公开(公告)日：2022-07-28
申请号：US17412393
申请日：2021-08-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Min Park , Han Jin Lim , Kyoo Ho Jung , Cheol Jin Cho
IPC: H01L49/02
Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
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