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公开(公告)号：US11728372B2
公开(公告)日：2023-08-15
申请号：US17714259
申请日：2022-04-06
发明人： Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
CPC分类号： H01L28/56 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/28247 , H10B53/30 , H10B12/00
摘要： There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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公开(公告)号：US20220238641A1
公开(公告)日：2022-07-28
申请号：US17412393
申请日：2021-08-26
发明人： Jung Min Park , Han Jin Lim , Kyoo Ho Jung , Cheol Jin Cho
IPC分类号： H01L49/02
摘要： Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
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公开(公告)号：US12125872B2
公开(公告)日：2024-10-22
申请号：US18347850
申请日：2023-07-06
发明人： Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
CPC分类号： H01L28/56 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/28247 , H10B53/30 , H10B12/00
摘要： There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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公开(公告)号：US11322578B2
公开(公告)日：2022-05-03
申请号：US16590565
申请日：2019-10-02
发明人： Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
IPC分类号： H01L49/02 , H01L21/02 , H01L21/28 , H01L27/11507 , H01L27/108
摘要： There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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公开(公告)号：US11069768B2
公开(公告)日：2021-07-20
申请号：US16781151
申请日：2020-02-04
发明人： Young-Lim Park , Se Hyoung Ahn , Sang Yeol Kang , Chang Mu An , Kyoo Ho Jung
IPC分类号： H01L27/11507 , H01L27/108 , H01L49/02
摘要： A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
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公开(公告)号：US12094924B2
公开(公告)日：2024-09-17
申请号：US17567316
申请日：2022-01-03
发明人： Kyoo Ho Jung , Sang Yeol Kang , Su Hwan Kim , Dong Kwan Baek , Yu Kyung Shin , Won Sik Choi
IPC分类号： G11C11/402 , H01L49/02 , H10B12/00
CPC分类号： H01L28/65 , G11C11/4023 , H10B12/30
摘要： A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).
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公开(公告)号：US11527604B2
公开(公告)日：2022-12-13
申请号：US17342610
申请日：2021-06-09
发明人： Young-Lim Park , Se Hyoung Ahn , Sang Yeol Kang , Chang Mu An , Kyoo Ho Jung
IPC分类号： H01L27/11507 , H01L27/108 , H01L49/02
摘要： A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
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公开(公告)号：US20200286985A1
公开(公告)日：2020-09-10
申请号：US16590565
申请日：2019-10-02
发明人： Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
IPC分类号： H01L49/02 , H01L21/02 , H01L21/28 , H01L27/11507
摘要： There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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