公开(公告)号：US20150138890A1

公开(公告)日：2015-05-21

申请号：US14610584

申请日：2015-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Hwa KANG ,  Sang-Wan NAM ,  Donghyuk CHAE ,  ChiWeon YOON

IPC: G11C16/08 ,  H01L27/115 ,  G11C16/04

CPC classification number: G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

Abstract translation: 非易失性存储器件包括具有连接在衬底和多个位线之间并由选择线选择的多个单元串的存储单元阵列，以及配置成在至少两个方向上驱动选择线的选通电路。