公开(公告)号：US08652968B2

公开(公告)日：2014-02-18

申请号：US13719235

申请日：2012-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Geun Yu ,  Eunsung Kim ,  Chulho Shin

IPC: H01L21/311

CPC classification number: H01L21/02337 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76816 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

Abstract: A method of fabricating a semiconductor device may include forming spacer line patterns on sidewalls of photoresist. A planarization etching process may be performed on a subsequently added planarization layer, after forming a mesh-shaped mask pattern from the spacer line patterns.

Abstract translation: 制造半导体器件的方法可以包括在光致抗蚀剂的侧壁上形成间隔线图案。 在从隔离线图案形成网状掩模图案之后，可以对随后添加的平坦化层执行平面化蚀刻工艺。