公开(公告)号：US20240144988A1

公开(公告)日：2024-05-02

申请号：US18213826

申请日：2023-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongseok Seo ,  Chulhwan Choo ,  Doohee Hwang

IPC: G11C11/406 ,  G06F3/06 ,  G11C11/408 ,  G11C11/4091 ,  G11C11/4096

CPC classification number: G11C11/406 ,  G06F3/0619 ,  G06F3/0658 ,  G06F3/0659 ,  G06F3/0673 ,  G11C11/4087 ,  G11C11/4091 ,  G11C11/4096

Abstract: A method of operating a memory device, the method includes periodically receiving a refresh command from a host, determining whether a target row address is activated during a predetermined period of time, and skipping a refresh operation on a word line corresponding to the target row address when the target row address is activated, and transmitting, to the host, a refresh skip signal corresponding to the word line on which the refresh operation is skipped, or performing, in response to the refresh command, a refresh operation on a word line corresponding to the target row address when the target row address is not activated.