公开(公告)号：US20240274685A1

公开(公告)日：2024-08-15

申请号：US18242399

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： HEUNG-SOON LEE ,  YONGHEE PARK ,  DONG-GWAN SHIN ,  SEOKHOON KIM ,  SEUNGKYU KIM ,  HONGSEON YANG

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device and a method of manufacturing the same are provided. A semiconductor device includes: an active pattern including a lower pattern and a plurality of sheet patterns spaced apart from each other on the lower pattern; a gate structure positioned on the lower pattern and surrounding the sheet patterns; source/drain patterns positioned on both sides of the gate structure, and stacked patterns positioned between the source/drain patterns and the sheet patterns, wherein a stacked pattern includes a first stacked pattern and a second stacked pattern sequentially stacked on a side surface of a sheet pattern, the second stacked pattern including a material different from a material of the first stacked pattern, and a first width of the sheet pattern is smaller than a second width of the gate structure.