公开(公告)号：US20160062798A1

公开(公告)日：2016-03-03

申请号：US14721517

申请日：2015-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyeongtaek LEE ,  SEUNGKYU KIM ,  Jieun PARK ,  WonJoon JANG

IPC: G06F9/48 ,  G06F9/50

CPC classification number: G06F9/4881 ,  G06F9/4856 ,  G06F9/5027 ,  G06F9/5033 ,  G06F9/5094 ,  Y02D10/22 ,  Y02D10/24 ,  Y02D10/32

Abstract: A scheduling method of a system-on-chip including a multi-core processor includes detecting a scheduling request of a thread to be executed in the multi-core processor, and detecting a calling thread having the same context as the scheduling-requested thread among threads that are being executed in the multi-core processor. The method includes reassigning or resetting the scheduling-requested thread according to performance of a core to execute the calling thread having the same context.

Abstract translation: 包括多核处理器的片上系统的调度方法包括：检测要在多核处理器中执行的线程的调度请求，以及检测具有与调度请求线程相同上下文的调用线程， 正在多核处理器中执行的线程。 该方法包括根据核的性能重新分配或重新调度所请求的线程以执行具有相同上下文的调用线程。

公开(公告)号：US20240274685A1

公开(公告)日：2024-08-15

申请号：US18242399

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： HEUNG-SOON LEE ,  YONGHEE PARK ,  DONG-GWAN SHIN ,  SEOKHOON KIM ,  SEUNGKYU KIM ,  HONGSEON YANG

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device and a method of manufacturing the same are provided. A semiconductor device includes: an active pattern including a lower pattern and a plurality of sheet patterns spaced apart from each other on the lower pattern; a gate structure positioned on the lower pattern and surrounding the sheet patterns; source/drain patterns positioned on both sides of the gate structure, and stacked patterns positioned between the source/drain patterns and the sheet patterns, wherein a stacked pattern includes a first stacked pattern and a second stacked pattern sequentially stacked on a side surface of a sheet pattern, the second stacked pattern including a material different from a material of the first stacked pattern, and a first width of the sheet pattern is smaller than a second width of the gate structure.