公开(公告)号：US20210027835A1

公开(公告)日：2021-01-28

申请号：US16821265

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DOJEON LEE ,  DUEUNG KIM ,  JIN-YOUNG KIM

IPC: G11C11/56 ,  G11C11/408 ,  G11C11/4094 ,  G11C11/4074

Abstract: A memory device includes a bay comprises a plurality of word lines, a plurality of bit lines, and a memory cell connected to a first word line of the plurality of word lines and a first bit line of the plurality of bit lines, a row decoder configured to bias at least one word line of the word lines adjacent to the first word line and float remaining non-adjacent word lines of the plurality of word lines not adjacent to the first word line, in an access operation associated with the memory cell, and a column decoder configured to bias at least one bit line of the bit lines adjacent to the first bit line and float remaining non-adjacent bit lines of the plurality of bit lines not adjacent to the first bit line, in the access operation.

公开(公告)号：US20200381478A1

公开(公告)日：2020-12-03

申请号：US16780014

申请日：2020-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： SI-HO SONG ,  YOUNGBAE KIM ,  DUEUNG KIM ,  CHANGHYUN CHO

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: A nonvolatile memory device includes a memory cell array, a word line drive block that is connected to a first group of memory cells through a first group of word lines and to a second group of memory cells through a second group of word lines, a bit line bias and sense block that is connected to the first and second groups of memory cells through bit lines, a variable current supply block that generates a word line current to be supplied to a selected word line, and a control logic block that receives an address and a command and controls the variable current supply block to adjust an amount of the word line current based on the address. The control logic block further varies the amount of the word line current depending on a distance between the selected word line and the substrate.