公开(公告)号：US20210118618A1

公开(公告)日：2021-04-22

申请号：US16850041

申请日：2020-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGHUN SHIN ,  JAEJUNE JANG ,  DUKSEO PARK ,  SUNWOO PARK ,  HOWOO PARK

IPC: H01G4/35 ,  H01G4/005 ,  H01G4/40 ,  H01L23/64

Abstract: A decoupling capacitor includes a first insulating layer extending in a horizontal direction, a storage plate arranged on the first insulating layer, a top plate facing the storage plate, a second insulating layer interposed between the storage plate and the top plate and having a plurality of through holes, a capacitor block including a plurality of capacitor structures in the plurality of through holes, a wiring structure covering the top plate, a first conductive pad arranged on the wiring structure and configured to be electrically connected to the storage plate through a first conductive path of the wiring structure, and a second conductive pad spaced apart from the first conductive pad in the horizontal direction in the same plane as the first conductive pad and configured to be electrically connected to the top plate through a second conductive path of the wiring structure.

公开(公告)号：US20160197118A1

公开(公告)日：2016-07-07

申请号：US14956680

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： DUKSEO PARK ,  SANGIL JUNG ,  CHANGROK MOON

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.

Abstract translation: 图像传感器可以包括衬底的有源区的光电转换部分和衬底中的沟槽。 传输晶体管栅电极可以从沟槽的外部延伸到沟槽中并且终止于沟槽中以在光电转换部分中提供沟槽的暴露部分。