公开(公告)号：US20130234273A1

公开(公告)日：2013-09-12

申请号：US13767135

申请日：2013-02-14

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： YunKi Lee ,  Seunghoon Kim ,  YONGSICK KIM ,  CHANGROK MOON

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14685

Abstract: The inventive concept provides image sensors and methods of forming the same. In the image sensor, a surface trap region may be disposed to be adjacent to a surface of a substrate lens component. Thus, a dark current characteristic may be improved.

Abstract translation: 本发明构思提供了图像传感器及其形成方法。 在图像传感器中，可以将表面捕获区域设置为与衬底透镜部件的表面相邻。 因此，可以提高暗电流特性。

公开(公告)号：US20250160020A1

公开(公告)日：2025-05-15

申请号：US19019718

申请日：2025-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONGKI KIM ,  CHANGROK MOON ,  TAEHYONG KIM ,  SEUNGJAE OH ,  JIHYUN KWAK

IPC: H10F39/00 ,  H10F39/18

Abstract: An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.

公开(公告)号：US20200176499A1

公开(公告)日：2020-06-04

申请号：US16784308

申请日：2020-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGHOON PARK ,  BUMSUK KIM ,  JUNG-SAENG KIM ,  MIN JANG ,  TAESUB JUNG ,  HYUKJIN JUNG ,  DONGMIN KEUM ,  CHANGROK MOON

IPC: H01L27/146 ,  H01L27/32 ,  G06K9/00 ,  G06F21/32

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US20180182806A1

公开(公告)日：2018-06-28

申请号：US15798387

申请日：2017-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGGU JIN ,  CHANGROK MOON ,  DUCKHYUNG LEE ,  SEOKHA LEE

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  G02B27/10 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

Abstract: A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.

公开(公告)号：US20250160021A1

公开(公告)日：2025-05-15

申请号：US19019766

申请日：2025-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONGKI KIM ,  CHANGROK MOON ,  TAEHYONG KIM ,  SEUNGJAE OH ,  JIHYUN KWAK

IPC: H10F39/00 ,  H10F39/18

Abstract: An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.

公开(公告)号：US20200227459A1

公开(公告)日：2020-07-16

申请号：US16831928

申请日：2020-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGHOON PARK ,  BUMSUK KIM ,  JUNG-SAENG KIM ,  MIN JANG ,  TAESUB JUNG ,  HYUKJIN JUNG ,  DONGMIN KEUM ,  CHANGROK MOON

IPC: H01L27/146 ,  G06K9/00 ,  H01L27/32 ,  G06F21/32

Abstract: Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

公开(公告)号：US20220165774A1

公开(公告)日：2022-05-26

申请号：US17511754

申请日：2021-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONGKI KIM ,  CHANGROK MOON ,  TAEHYONG KIM ,  SEUNGJAE OH ,  JIHYUN KWAK

IPC: H01L27/146

Abstract: An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.

公开(公告)号：US20160197118A1

公开(公告)日：2016-07-07

申请号：US14956680

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： DUKSEO PARK ,  SANGIL JUNG ,  CHANGROK MOON

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.

Abstract translation: 图像传感器可以包括衬底的有源区的光电转换部分和衬底中的沟槽。 传输晶体管栅电极可以从沟槽的外部延伸到沟槽中并且终止于沟槽中以在光电转换部分中提供沟槽的暴露部分。