公开(公告)号：US20220150430A1

公开(公告)日：2022-05-12

申请号：US17366868

申请日：2021-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Shik KIM ,  Young Gu JIN

IPC: H04N5/378 ,  H04N5/341 ,  H01L27/146 ,  H04N5/374

Abstract: An image sensor comprises an upper chip including pixels; and a lower chip placed below the upper chip, wherein a pixel of the pixels includes an optical conversion element configured that light is incident on the optical conversion element, a first storage gate or a first storage node which is electrically connected to the optical conversion element and configured to store electric charge transferred from the optical conversion element during a first time interval, and a second storage gate or a second storage node which is electrically connected to the optical conversion element and configured to store the electric charge transferred from the optical conversion element during a second time interval different from the first time interval, the pixel is configured to generate a first pixel signal on the basis of the electric charge stored in the first storage gate, the lower chip includes a frame buffer.

公开(公告)号：US20220130884A1

公开(公告)日：2022-04-28

申请号：US17393855

申请日：2021-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Shik KIM ,  Min-Sun KEEL ,  Hoon Joo NA ,  Kang Ho LEE ,  Kil Ho LEE ,  Sang Kil LEE ,  Jung Hyuk LEE ,  Shin Hee HAN

IPC: H01L27/146

Abstract: An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.

公开(公告)号：US20220139991A1

公开(公告)日：2022-05-05

申请号：US17368112

申请日：2021-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Shik KIM ,  Min-Sun KEEL ,  Sang Kil LEE

IPC: H01L27/146 ,  H01L25/065 ,  H01L27/22

Abstract: An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.