STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE

    公开(公告)号:US20250125820A1

    公开(公告)日:2025-04-17

    申请号:US18628043

    申请日:2024-04-05

    Abstract: A storage device is provided. The storage device includes: a nonvolatile memory device; and a controller configured to: receive first data from the nonvolatile memory device; perform first error correction decoding with respect to the first data to obtain second data; control an error correction capability and an error detection capability of second error correction decoding based on information about the first error correction decoding; and perform the second error correction decoding with respect to the second data based on the error correction capability and the error detection capability to obtain third data.

    ERROR CORRECTING CODE ENCODING CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

    公开(公告)号:US20240340025A1

    公开(公告)日:2024-10-10

    申请号:US18520707

    申请日:2023-11-28

    CPC classification number: H03M13/1168 H03M13/616

    Abstract: A semiconductor device may include an error correcting code (ECC) encoder that encodes a codeword based on a parity check matrix and generates the encoded codeword including an information bit and a parity bit. The parity check matrix is divided into an information part corresponding to the information bit and a parity part corresponding to the parity bit. The parity part includes a block matrix T including a plurality of first sub-matrices arranged in a dual diagonal structure, a block matrix B including a first sub-matrix and a (1−a)-th sub-matrix, a block matrix D composed of a first sub-matrix, and a block matrix E including a first sub-matrix and a masked (1−(a+1))-th sub-matrix. A location where the first sub-matrix is placed in the block matrix B precedes a location where the masked (1−(a+1))-th sub-matrix is placed in the block matrix E.

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