公开(公告)号：US20240413182A1

公开(公告)日：2024-12-12

申请号：US18540418

申请日：2023-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngrae Kim ,  Sachoun Park ,  Daeuk Jung ,  Jeongjin Cho

IPC: H01L27/146

Abstract: An image sensor includes: a first substrate including: a first side, a second side, a pixel array region, and an edge region; and a micro lens array on the second side, which includes micro lenses. Each of the micro lenses includes a first lens layer and a second lens layer on the first lens layer. A second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer. A first eccentric degree of the second lens layer on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer at a center of the pixel array region.

公开(公告)号：US20240421167A1

公开(公告)日：2024-12-19

申请号：US18390217

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngrae Kim ,  SACHOUN PARK ,  Daeuk Jung ,  JEONGJIN CHO ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: An image sensor includes a first substrate having a first side and a second side opposite each other, and including a pixel array region having plurality of active regions disposed at the first side, a shallow trench isolation structure disposed at the first side of the first substrate and isolating each of the plurality of active regions, a plurality of floating diffusion regions disposed at the plurality of active regions of the first substrate, and a floating diffusion region connector connecting the plurality of floating diffusion regions with each other. The floating diffusion region connector is buried in the shallow trench isolation structure and an upper surface of the floating diffusion region connector is lower than an upper surface of the shallow trench isolation structure.