公开(公告)号：US20220303509A1

公开(公告)日：2022-09-22

申请号：US17509696

申请日：2021-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H04N9/04 ,  H04N5/3745 ,  H04N5/351

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

公开(公告)号：US20230268366A1

公开(公告)日：2023-08-24

申请号：US18097749

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungki BAEK ,  KYUNGHO LEE ,  TAESUB JUNG ,  SEUNGKI JUNG ,  JUNGHYUNG PYO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a substrate including a pixel region, the substrate extending in a first direction and a second direction intersecting the first direction, first and second photoelectric conversion regions disposed in the pixel region and adjacent to each other in a first direction, a deep device isolation pattern penetrating the substrate in a third direction perpendicular to the first and second directions, and surrounding the pixel region, the deep device isolation pattern comprising first extensions extending in the second direction between the first and second photoelectric conversion regions, the first extensions spaced apart from each other in the second direction, a plurality of first transfer gate electrodes vertically overlapping with the first photoelectric conversion region, and a plurality of second transfer gate electrodes vertically overlapping with the second photoelectric conversion region. The first photoelectric conversion region extends in the second direction under the plurality of first transfer gate electrodes.

公开(公告)号：US20210225906A1

公开(公告)日：2021-07-22

申请号：US17224655

申请日：2021-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H01L27/146

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.

公开(公告)号：US20240421167A1

公开(公告)日：2024-12-19

申请号：US18390217

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngrae Kim ,  SACHOUN PARK ,  Daeuk Jung ,  JEONGJIN CHO ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: An image sensor includes a first substrate having a first side and a second side opposite each other, and including a pixel array region having plurality of active regions disposed at the first side, a shallow trench isolation structure disposed at the first side of the first substrate and isolating each of the plurality of active regions, a plurality of floating diffusion regions disposed at the plurality of active regions of the first substrate, and a floating diffusion region connector connecting the plurality of floating diffusion regions with each other. The floating diffusion region connector is buried in the shallow trench isolation structure and an upper surface of the floating diffusion region connector is lower than an upper surface of the shallow trench isolation structure.

公开(公告)号：US20230199335A1

公开(公告)日：2023-06-22

申请号：US18110953

申请日：2023-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H04N25/13 ,  H04N25/50 ,  H04N25/77

CPC classification number: H04N25/13 ,  H04N25/50 ,  H04N25/77

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

公开(公告)号：US20250081639A1

公开(公告)日：2025-03-06

申请号：US18950847

申请日：2024-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

公开(公告)号：US20240213283A1

公开(公告)日：2024-06-27

申请号：US18596322

申请日：2024-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14627

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.

公开(公告)号：US20220216250A1

公开(公告)日：2022-07-07

申请号：US17491705

申请日：2021-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

公开(公告)号：US20200243579A1

公开(公告)日：2020-07-30

申请号：US16699150

申请日：2019-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H01L27/146

Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure.

公开(公告)号：US20200243578A1

公开(公告)日：2020-07-30

申请号：US16566943

申请日：2019-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H01L27/146

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.