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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20240413182A1

    公开(公告)日：2024-12-12

    申请号：US18540418

    申请日：2023-12-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngrae Kim ,  Sachoun Park ,  Daeuk Jung ,  Jeongjin Cho

    IPC: H01L27/146

    Abstract: An image sensor includes: a first substrate including: a first side, a second side, a pixel array region, and an edge region; and a micro lens array on the second side, which includes micro lenses. Each of the micro lenses includes a first lens layer and a second lens layer on the first lens layer. A second mean curvature radius of the second lens layer is smaller than a first mean curvature radius of the first lens layer. A first eccentric degree of the second lens layer on an edge of the pixel array region is greater than a second eccentric degree of the second lens layer at a center of the pixel array region.

    Pixel array and image sensor including the same
    2.
    发明授权
    Pixel array and image sensor including the same 有权

    公开(公告)号：US12183750B2

    公开(公告)日：2024-12-31

    申请号：US17831478

    申请日：2022-06-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jeongjin Cho ,  Kwanhee Lee

    IPC: H01L27/146 ,  H04N25/75 ,  H04N25/772

    Abstract: A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

    IMAGE SENSORS
    3.
    发明公开
    IMAGE SENSORS 审中-公开

    公开(公告)号：US20240120351A1

    公开(公告)日：2024-04-11

    申请号：US18302828

    申请日：2023-04-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youngrae Kim ,  Sanghyuck Moon ,  Jueun Park ,  Jaeho Lee ,  Jeongjin Cho

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

    Abstract: An image sensor includes a substrate and a pixel separation portion disposed in the substrate and separating first pixels and second pixels from each other. The first pixels and the second pixels are alternately arranged in a first direction and a second direction which intersect each other. Each of the first pixels has a first width in the first direction. Each of the second pixels has a second width in the first direction, which is narrower than the first width. The pixel separation portion includes a main separation portion between the first and second pixels, and protrusions, each of which protrudes from a side surface of the main separation portion in at least one of the first and second directions. Ones of the protrusions protrude into a respective one of the first pixels to divide the respective one of the first pixels into a plurality of sub-pixels.

    Image sensor using transfer gate signal having three voltage levels, and method of operating the same
    4.
    发明授权
    Image sensor using transfer gate signal having three voltage levels, and method of operating the same 有权

    公开(公告)号：US12302653B2

    公开(公告)日：2025-05-13

    申请号：US17715358

    申请日：2022-04-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jeongjin Cho ,  Kyungho Lee ,  Taesub Jung

    IPC: H01L27/146 ,  H10F39/00 ,  H10F39/18

    Abstract: A method of operating an image sensor includes accumulating first charges through a photo diode, applying a first transfer gate signal having a first voltage level to a transfer transistor, performing, through a reset transistor, a first reset operation on a floating diffusion node connected with the reset transistor and the transfer transistor, changing the first voltage level of the first transfer gate signal to a second voltage level higher than the first voltage level, during the first reset operation, changing the second voltage level of the first transfer gate signal to a third voltage level higher than the second voltage level, and changing the third voltage level of the first transfer gate signal to the second voltage level.

    Light sensing circuit and image sensor including the same
    6.
    发明授权
    Light sensing circuit and image sensor including the same 有权

    公开(公告)号：US11330201B2

    公开(公告)日：2022-05-10

    申请号：US16670216

    申请日：2019-10-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungjoon Lee ,  Jungbin Yun ,  Younghwan Park ,  Jeongjin Cho

    IPC: H04N5/335 ,  H04N5/343 ,  H01L27/146

    Abstract: A light sensing circuit and an image sensor are provided. The image sensor includes a first pixel unit including a plurality of first photodiodes and a first driving circuit to generate a first pixel signal based on an amount of charges stored in the plurality of first photodiodes, a second pixel unit including a plurality of second photodiodes and a second driving circuit to generate a second pixel signal based on an amount of charges stored in the plurality of second photodiodes, and a switching circuit connected to the first driving circuit through a first diffusion node and connected to the second driving circuit through a second diffusion node. The switching circuit connects or disconnects the first diffusion node and the second diffusion node based on a mode selection signal.

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