公开(公告)号：US09159737B2

公开(公告)日：2015-10-13

申请号：US14447746

申请日：2014-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoong Kim ,  Junkyu Yang ,  HongSuk Kim ,  Tae-Jong Han

IPC: H01L29/00 ,  H01L27/115 ,  H01L21/764

CPC classification number: H01L27/11521 ,  H01L21/764

Abstract: Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.

Abstract translation: 提供半导体器件及其形成方法。 半导体器件中的器件隔离结构包括间隙区域。 间隙区域中的真空或空气的介电常数小于氧化物层的介电常数，结果可能减少相邻电池之间的耦合和伴随的干扰。

公开(公告)号：US11188708B2

公开(公告)日：2021-11-30

申请号：US16791112

申请日：2020-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daewoong Kim ,  Jaehyun Kim ,  Sungwoo Cho ,  Yunseok Hyun

IPC: G06F40/106 ,  G06F40/14 ,  H04L12/58

Abstract: An electronic device according to various embodiments includes a communication circuit, a touch screen, at least one memory storing an application supporting an RCS, and at least one processor. The at least one processor is configured to control the electronic device to: receive an RCS message from an external device through the communication circuit using the application; identify whether the RCS message is a first type or a second type based on data included in a header of the RCS message; identify a first layout object from the RCS message based on identifying that the message is the first type; identify whether each of second objects under the first layout object is a content object or a layout object indicating relative positions of a plurality of contents provided by the content object to be displayed on the touch screen; and display the plurality of contents based on the relative positions.

公开(公告)号：US20150001609A1

公开(公告)日：2015-01-01

申请号：US14447746

申请日：2014-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoong Kim ,  Junkyu Yang ,  HongSuk Kim ,  Tae-Jong Han

IPC: H01L27/115

CPC classification number: H01L27/11521 ,  H01L21/764

Abstract: Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.

Abstract translation: 提供半导体器件及其形成方法。 半导体器件中的器件隔离结构包括间隙区域。 间隙区域中的真空或空气的介电常数小于氧化物层的介电常数，结果可能减少相邻电池之间的耦合和伴随的干扰。