公开(公告)号：US20150001609A1

公开(公告)日：2015-01-01

申请号：US14447746

申请日：2014-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoong Kim ,  Junkyu Yang ,  HongSuk Kim ,  Tae-Jong Han

IPC: H01L27/115

CPC classification number: H01L27/11521 ,  H01L21/764

Abstract: Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.

Abstract translation: 提供半导体器件及其形成方法。 半导体器件中的器件隔离结构包括间隙区域。 间隙区域中的真空或空气的介电常数小于氧化物层的介电常数，结果可能减少相邻电池之间的耦合和伴随的干扰。

公开(公告)号：US11791209B2

公开(公告)日：2023-10-17

申请号：US17971807

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  Jaekang Koh ,  Tae-Jong Han

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/3213

CPC classification number: H01L21/76895 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/7685 ,  H01L21/76865

Abstract: Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern.

公开(公告)号：US11581326B2

公开(公告)日：2023-02-14

申请号：US16913705

申请日：2020-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Jong Han ,  Jaekang Koh ,  Munjun Kim ,  Su Jong Kim ,  Seung-Heon Lee

IPC: H01L27/11573 ,  H01L23/528 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/1158 ,  H01L27/11575

Abstract: A three-dimensional semiconductor memory device is disclosed. The device may include a substrate including a cell array region and a connection region provided at an end portion of the cell array region, an electrode structure extending from the cell array region to the connection region, the electrode structure including electrodes sequentially stacked on the substrate, an upper insulating layer provided on the electrode structure, a first horizontal insulating layer provided in the upper insulating layer and extending along the electrodes, and first contact plugs provided on the connection region to penetrate the upper insulating layer and the first horizontal insulating layer. The first horizontal insulating layer may include a material having a better etch-resistive property than the upper insulating layer.

公开(公告)号：US09159737B2

公开(公告)日：2015-10-13

申请号：US14447746

申请日：2014-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoong Kim ,  Junkyu Yang ,  HongSuk Kim ,  Tae-Jong Han

IPC: H01L29/00 ,  H01L27/115 ,  H01L21/764

CPC classification number: H01L27/11521 ,  H01L21/764

Abstract: Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.

Abstract translation: 提供半导体器件及其形成方法。 半导体器件中的器件隔离结构包括间隙区域。 间隙区域中的真空或空气的介电常数小于氧化物层的介电常数，结果可能减少相邻电池之间的耦合和伴随的干扰。

公开(公告)号：US11482453B2

公开(公告)日：2022-10-25

申请号：US16784830

申请日：2020-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Heon Lee ,  Munjun Kim ,  Jaekang Koh ,  Tae-Jong Han

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/3213

Abstract: Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern.