IMAGE SENSOR
    1.
    发明申请

    公开(公告)号:US20250151441A1

    公开(公告)日:2025-05-08

    申请号:US18809676

    申请日:2024-08-20

    Abstract: An image sensor includes a substrate, a first pixel disposed in the substrate, the first pixel including a first photoelectric conversion region, a second pixel disposed adjacent to the first pixel in the substrate, the second pixel including a second photoelectric conversion region, a first floating diffusion region in the first pixel, a second floating diffusion region in the second pixel, an insulation layer on the substrate, and a first buried connect penetrating the insulation layer and connected to the first floating diffusion region and the second floating diffusion region, wherein the first buried connect includes an upper surface and a lower surface, the upper surface of the first buried connect is at a higher vertical level than an upper surface of the insulation layer, and the lower surface of the first buried connect is at a higher or equal vertical level than a lower surface of the insulation layer.

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