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1.发明申请公开(公告)号：US20190371410A1
公开(公告)日：2019-12-05
申请号：US16226810
申请日：2018-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seong-Jin SONG , Hyun-Wook PARK , Bong-Soon LIM , Do-Bin KIM
Abstract: In a method of erasing data in a nonvolatile memory device including a memory block, it is determined whether a data erase characteristic for the memory block is degraded for each predetermined cycle. The memory block has a plurality of memory cells therein, the plurality of memory cells being stacked in a vertical direction relative to an underlying substrate. A data erase operation is performed by changing a level of a voltage applied to selection transistors for selecting the memory block as an erase target block when it is determined that the data erase characteristic is degraded.
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2.发明申请公开(公告)号：US20220199174A1
公开(公告)日：2022-06-23
申请号：US17694229
申请日：2022-03-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seong-Jin SONG , Hyun-Wook PARK , Bong-Soon LIM , Do-Bin KIM
Abstract: A nonvolatile memory device includes a memory cell region and a peripheral circuit region. The memory cell region includes a memory block, and the peripheral circuit region includes a control circuit. The memory cell region includes a first metal pad. The peripheral circuit region includes a second metal pad and is vertically connected to the memory cell region by the first metal pad and the second metal pad. The memory block includes a plurality of memory cells disposed in a vertical direction. The control circuit determines whether a data erase characteristic for the memory block is degraded for each predetermined cycle of data erase operation, and performs a data erase operation by changing a level of a voltage applied to selection transistors for selecting the memory block as an erase target block when it is determined that the data erase characteristic is degraded.
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