公开(公告)号：US20210272815A1

公开(公告)日：2021-09-02

申请号：US17303062

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon Khang ,  Sug Hyun Sung ,  Min Hwan Jeon

IPC: H01L21/308 ,  H01L21/8234 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

公开(公告)号：US12074031B2

公开(公告)日：2024-08-27

申请号：US17303062

申请日：2021-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon Khang ,  Sug Hyun Sung ,  Min Hwan Jeon

IPC: H01L21/308 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/3086 ,  H01L21/823431 ,  H01L21/823468 ,  H01L29/6681

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

公开(公告)号：US11024509B2

公开(公告)日：2021-06-01

申请号：US16540726

申请日：2019-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon Khang ,  Sug Hyun Sung ,  Min Hwan Jeon

IPC: H01L21/8234 ,  H01L21/308 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.