公开(公告)号：US10930749B2

公开(公告)日：2021-02-23

申请号：US16232369

申请日：2018-12-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Ho Jeon ,  Jung Hyun Kim ,  Sung Woo Myung ,  Young Mook Oh ,  Dong Seok Lee

IPC: H01L29/423 ,  H01L21/763 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/764

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel region that protrudes from a substrate. The semiconductor device includes a gate line on the channel region. Moreover, the semiconductor device includes a gate isolation layer that is between a first portion of the gate line and a second portion of the gate line. The gate isolation layer is in contact with the gate line and includes a gap that is in the gate isolation layer. Related methods of manufacturing a semiconductor device are also provided.