公开(公告)号：US20190189559A1

公开(公告)日：2019-06-20

申请号：US16285332

申请日：2019-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-hyun LEE

IPC: H01L23/525 ,  H01L29/423 ,  H01L27/112 ,  G11C17/16 ,  G11C17/18 ,  H01L27/10

CPC classification number: H01L23/5252 ,  G11C17/16 ,  G11C17/18 ,  H01L23/525 ,  H01L27/101 ,  H01L27/11206 ,  H01L29/423 ,  H01L29/42368

Abstract: An anti-fuse device includes a program transistor and a read transistor. The program transistor executes a program via insulation breakdown of a gate insulating layer. The read transistor is adjacent to the program transistor and reads the state of the program transistor. At least one of a first gate electrode of the program transistor or a second gate electrode of the read transistor is buried in a substrate.

公开(公告)号：US20190146517A1

公开(公告)日：2019-05-16

申请号：US16185661

申请日：2018-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-woo RYU ,  Min-jae KIM ,  Young-do KWON ,  Dong-hyun LEE ,  Dong-hun LEE ,  Hyoung-woo LIM

IPC: G05D1/02 ,  G05D1/00 ,  G06T7/73

Abstract: A moving apparatus for cleaning is provided. The moving apparatus includes a cleaner for cleaning, a traveler for moving the moving apparatus, an image sensor for capturing an image of surroundings of the moving apparatus, and at least one processor configured to control the image sensor to detect at least one mark among a plurality of marks, respectively corresponding to different distances of the moving apparatus in relation to a station apparatus, from the image captured by the image sensor, and control the traveler to move the moving apparatus to a location of the station apparatus, which is determined based on the image where the mark is detected.

公开(公告)号：US20180166382A1

公开(公告)日：2018-06-14

申请号：US15670096

申请日：2017-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-hyun LEE

IPC: H01L23/525 ,  G11C17/16 ,  G11C17/18 ,  H01L27/10 ,  H01L27/112 ,  H01L29/423

CPC classification number: H01L23/5252 ,  G11C17/16 ,  G11C17/18 ,  H01L23/525 ,  H01L27/101 ,  H01L27/11206 ,  H01L29/423 ,  H01L29/42368

Abstract: An anti-fuse device includes a program transistor and a read transistor. The program transistor executes a program via insulation breakdown of a gate insulating layer. The read transistor is adjacent to the program transistor and reads the state of the program transistor. At least one of a first gate electrode of the program transistor or a second gate electrode of the read transistor is buried in a substrate.