公开(公告)号：US20180226423A1

公开(公告)日：2018-08-09

申请号：US15946432

申请日：2018-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin-hwan KANG ,  Young-hwan SON ,  Dong-seog EUN ,  Chang-sup LEE ,  Jae-hoon JANG

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157

CPC classification number: H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

Abstract: In one embodiment, the semiconductor device includes a stack of alternating interlayer insulating layers and conductive layers on a substrate. Each of the conductive layers extends in a first direction less than a previous one of the conductive layers to define a landing portion of the previous one of the conductive layers. An insulating plug is in one of the conductive layers under one of the landing portions, and a contact plug extends from an upper surface of the one of the landing portions.