公开(公告)号：US20240103735A1

公开(公告)日：2024-03-28

申请号：US18333690

申请日：2023-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjun Shin ,  Yeongwoo Kang ,  DongHyeok Cho ,  Younghun Seo

IPC: G06F3/06

CPC classification number: G06F3/0614 ,  G06F3/0659 ,  G06F3/0673

Abstract: Disclosed is a memory device which includes a first memory cell that is electrically connected with a first word line and a first bit line, a first bit line sense amplifier circuit that is electrically connected with the first bit line, a first local sense amplifier circuit that is electrically connected with the first bit line sense amplifier circuit through a first local input/output line, a first local driver that is electrically connected with the first local sense amplifier circuit through a first pre-global input/output line, and a sense amplifier and write driver that is electrically connected with the first local driver through a global input/output line, and the first local driver selectively electrical-disconnects the first pre-global input/output line from the global input/output line, based on an operation for the first memory cell.