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公开(公告)号：US20250056795A1
公开(公告)日：2025-02-13
申请号：US18441968
申请日：2024-02-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changyoung Lee , Hyun-Chul Yoon , Yeongwoo Kang
Abstract: The present disclosure relates to memory devices. An example memory device includes a memory cell region including a memory cell array is configured to store data, and an antifuse cell array including a plurality of antifuse bit lines, a plurality of antifuse word lines, and a plurality of program transistors that is electrically coupled to a first antifuse bit line among the plurality of antifuse bit lines and that are coupled in parallel with one another. The memory device includes a peripheral circuit region including an antifuse sense amplifier is configured to output one-time programmable (OTP) data stored in the plurality of program transistors.
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公开(公告)号：US20240103735A1
公开(公告)日：2024-03-28
申请号：US18333690
申请日：2023-06-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seungjun Shin , Yeongwoo Kang , DongHyeok Cho , Younghun Seo
IPC: G06F3/06
CPC classification number: G06F3/0614 , G06F3/0659 , G06F3/0673
Abstract: Disclosed is a memory device which includes a first memory cell that is electrically connected with a first word line and a first bit line, a first bit line sense amplifier circuit that is electrically connected with the first bit line, a first local sense amplifier circuit that is electrically connected with the first bit line sense amplifier circuit through a first local input/output line, a first local driver that is electrically connected with the first local sense amplifier circuit through a first pre-global input/output line, and a sense amplifier and write driver that is electrically connected with the first local driver through a global input/output line, and the first local driver selectively electrical-disconnects the first pre-global input/output line from the global input/output line, based on an operation for the first memory cell.
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