公开(公告)号：US20240250114A1

公开(公告)日：2024-07-25

申请号：US18534997

申请日：2023-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinsu LEE ,  Jungwoo KANG ,  Donguk HAN ,  Hayeong KIM ,  Yirang LIM

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/315

Abstract: A capacitor structure includes a lower electrode; a dielectric pattern on a sidewall of the lower electrode; and an upper electrode structure, the upper electrode structure including a first upper electrode and a second upper electrode sequentially stacked on a sidewall of the dielectric pattern, wherein each of the first upper electrode and the second upper electrode includes a metal nitride, and the metal nitride included in the first upper electrode has a crystal orientation that is different from a crystal orientation of the metal nitride included in the second upper electrode, and a work function of the first upper electrode is greater than a work function of the second upper electrode.

公开(公告)号：US20230337412A1

公开(公告)日：2023-10-19

申请号：US17968464

申请日：2022-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon AN ,  Jin-Su LEE ,  Hongsik CHAE ,  Donguk HAN

IPC: H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10852

Abstract: A semiconductor device includes a substrate, a capacitor contact structure electrically connected to the substrate, and a lower electrode connected to the capacitor contact structure. The lower electrode includes a first electrode layer and a second electrode layer, the second electrode layer is on the first electrode layer, and the first electrode layer includes a group 14 element. The device includes a capacitor insulating layer covering the lower electrode, and an upper electrode covering the capacitor insulating layer. The first electrode layer includes an outer sidewall in contact with the capacitor insulating layer, the first electrode layer includes an inner sidewall in contact with the second electrode layer, and a concentration of the group 14 element in the inner sidewall of the first electrode layer is higher than a concentration of the group 14 element in the outer sidewall of the first electrode layer.