公开(公告)号：US12293081B2

公开(公告)日：2025-05-06

申请号：US18310741

申请日：2023-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Raghu Vamsi Krishna Talanki ,  Archita Khare ,  Eldho P. Mathew ,  Jin In So ,  Jong-Geon Lee ,  Venkata Ravi Shankar Jonnalagadda ,  Vishnu Charan Thummala

IPC: G06F3/06

Abstract: The present disclosure relates to field of Dual In-Line Memory Modules that discloses method and system for generating memory maps. The method comprises detecting, by computing system, at least one of DIMM and one or more Dynamic Random Access Memory (DRAM) chips associated with computing system. The one or more accelerators are configured in at least one of DIMM and one or more DRAM chips. Further, the method includes determining accelerator information for each of one or more accelerators via at least one of Serial Presence Detect (SPD) and Multi-Purpose Register (MPR) associated with at least one of DIMM and one or more DRAM chips. Method includes generating unique memory map for each of one or more accelerators based on accelerator information of corresponding one or more accelerators. As a result, performance of computing system may be improved as accelerator capabilities of one or more accelerators are effectively utilized.