公开(公告)号：US20200075656A1

公开(公告)日：2020-03-05

申请号：US16286897

申请日：2019-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook Lee ,  Euiyoung Song ,  Kwanghee Lee ,  Uihui Kwon ,  Jae Ho Kim ,  Jungchak Ahn

IPC: H01L27/146 ,  G02B5/18

Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.

公开(公告)号：US20230246050A1

公开(公告)日：2023-08-03

申请号：US18299117

申请日：2023-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook Lee ,  Euiyoung Song ,  Kwanghee Lee ,  Uihui Kwon ,  Jae Ho Kim ,  Jungchak Ahn

IPC: H01L27/146 ,  G02B5/18

CPC classification number: H01L27/14625 ,  G02B5/1842 ,  G02B5/1866 ,  H01L27/14623 ,  H01L27/14643 ,  H04N25/75

Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.

公开(公告)号：US11658194B2

公开(公告)日：2023-05-23

申请号：US16286897

申请日：2019-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook Lee ,  Euiyoung Song ,  Kwanghee Lee ,  Uihui Kwon ,  Jae Ho Kim ,  Jungchak Ahn

IPC: H01L27/146 ,  G02B5/18 ,  H04N5/378

CPC classification number: H01L27/14625 ,  G02B5/1842 ,  G02B5/1866 ,  H01L27/14623 ,  H01L27/14643 ,  H04N5/378

Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.