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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240405040A1

    公开(公告)日：2024-12-05

    申请号：US18423984

    申请日：2024-01-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seonghoon Ko ,  Jae Ho Kim ,  Wook Lee

    IPC: H01L27/146

    Abstract: The present disclosure relates to semiconductor device. One example semiconductor device includes a plurality of unit pixels, where each unit pixel of the plurality of unit pixels includes a pair of transfer gates including a first transfer gate and a second transfer gate, a photoelectric converter, and a floating diffusion region spaced apart from the photoelectric converter. The first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.

    Method of three-dimensional optoelectrical simulation of image sensor
    2.
    发明授权
    Method of three-dimensional optoelectrical simulation of image sensor 有权

    公开(公告)号：US10318678B2

    公开(公告)日：2019-06-11

    申请号：US14254337

    申请日：2014-04-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Wook Lee ,  Han-Gu Kim ,  Young-Keun Lee ,  Jong-Sung Jeon

    IPC: G06F17/50

    Abstract: A three-dimensional optoelectrical simulation includes generating a process simulation result including a doping profile of a silicon substrate of image sensor, a structure simulation result with respect to a back end of line structure, and a merged result generated by merging a process simulation result and a structure simulation result, selectively extending the merged result to an extended result by using a process simulation result or a structure simulation result, generating a segmented result for each pixel based on a merged result or an extended result, an optical crosstalk simulation result of image sensor based on a structure simulation result and an optical mesh, and a final simulation result including an electrical crosstalk simulation result of the image sensor based on a segmented result for each pixel and an optical crosstalk simulation result.

    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT
    3.
    发明申请
    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT 审中-公开

    公开(公告)号：US20200075656A1

    公开(公告)日：2020-03-05

    申请号：US16286897

    申请日：2019-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wook Lee ,  Euiyoung Song ,  Kwanghee Lee ,  Uihui Kwon ,  Jae Ho Kim ,  Jungchak Ahn

    IPC: H01L27/146 ,  G02B5/18

    Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.

    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME
    4.
    发明公开
    IMAGE SENSOR AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20230343800A1

    公开(公告)日：2023-10-26

    申请号：US18093609

    申请日：2023-01-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoungeun CHANG ,  Sungin Kim ,  Seonghoon Ko ,  Donghyun Kim ,  Wook Lee

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

    Abstract: An image sensor includes a substrate having a pixel region in which an active region having a locally asymmetric fin region limited by a locally cutout space is defined and a transistor provided in the pixel region. The transistor includes a horizontal gate portion provided on the active region and a vertical gate portion filling the locally cutout space and facing one of fin sidewalls of the locally asymmetric fin region. Distances of the source region and drain region formed in the active region from the locally asymmetric fin region are different from each other. An electronic system includes at least one camera module including an image sensor and a processor configured to process image data provided from the at least one camera module.

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