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    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT
    1.
    发明申请
    IMAGE SENSORS HAVING GRATING STRUCTURES THEREIN THAT PROVIDE ENHANCED DIFFRACTION OF INCIDENT LIGHT 审中-公开

    公开(公告)号：US20200075656A1

    公开(公告)日：2020-03-05

    申请号：US16286897

    申请日：2019-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Wook Lee ,  Euiyoung Song ,  Kwanghee Lee ,  Uihui Kwon ,  Jae Ho Kim ,  Jungchak Ahn

    IPC: H01L27/146 ,  G02B5/18

    Abstract: An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.

    Image sensor
    2.
    发明授权
    Image sensor 有权

    公开(公告)号：US10916587B2

    公开(公告)日：2021-02-09

    申请号：US16443233

    申请日：2019-06-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Yon Lee ,  Chang Hwa Kim ,  Jae Ho Kim ,  Sang Chun Park ,  Gwi Deok Ryan Lee ,  Beom Suk Lee ,  Jae Kyu Lee ,  Kazunori Kakehi

    IPC: H01L27/30 ,  H01L27/28

    Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240405040A1

    公开(公告)日：2024-12-05

    申请号：US18423984

    申请日：2024-01-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seonghoon Ko ,  Jae Ho Kim ,  Wook Lee

    IPC: H01L27/146

    Abstract: The present disclosure relates to semiconductor device. One example semiconductor device includes a plurality of unit pixels, where each unit pixel of the plurality of unit pixels includes a pair of transfer gates including a first transfer gate and a second transfer gate, a photoelectric converter, and a floating diffusion region spaced apart from the photoelectric converter. The first transfer gate and the second transfer gate are disposed asymmetrically with respect to the photoelectric converter and the floating diffusion region.

    IMAGE SENSOR
    4.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230352510A1

    公开(公告)日：2023-11-02

    申请号：US18164228

    申请日：2023-02-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junghye Kim ,  Donghyun Kim ,  Sung In Kim ,  Kyoungeun Chang ,  Jae Ho Kim

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

    Abstract: An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first pixel, a first source follower gate electrode on the first pixel and adjacent to the first sidewall and the second sidewall, a first impurity region adjacent to a first corner where the first sidewall and the second sidewall meet, a second impurity region adjacent to a second corner where the second sidewall and the third sidewall meet, and a third impurity region adjacent to a third corner where the first sidewall and the fourth sidewall meet. The first to third impurity regions are adjacent to the first source follower gate electrode. The second impurity region and the third impurity region are electrically connected to each other.

    SEMICONDUCTOR DESIGN AUTOMATION SYSTEM AND COMPUTING SYSTEM INCLUDING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DESIGN AUTOMATION SYSTEM AND COMPUTING SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20220138397A1

    公开(公告)日：2022-05-05

    申请号：US17395594

    申请日：2021-08-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Song-Yi Han ,  Jae Min Kim ,  Jae Ho Kim ,  Ji-Seong Doh ,  Kang-Hyun Baek ,  Young Kyou Shin ,  Seong Hun Jang ,  Young Jun Cho ,  Yun Ji Choi

    IPC: G06F30/398 ,  G06F30/12

    Abstract: A semiconductor design automation system comprises a simulator configured to generate simulation data, a recovery module configured to correct a sampling error of the simulation data to generate recovery simulation data, a hardware data module configured to generate real data, a preprocessing module configured to preprocess the real data to generate preprocessed real data, a database configured to store the recovery simulation data and the preprocessed real data, a first graphic user interface including an automatic simulation generator configured to generate a machine learning model of the recovery simulation data and the preprocessed real data and generate predicted real data therefrom, and a second graphic user interface including a visualization unit configured to generate a visualized virtualization process result from the machine learning model.

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