公开(公告)号：US20200088649A1

公开(公告)日：2020-03-19

申请号：US16364251

申请日：2019-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Hee JEANG ,  Aleksandr SHOROKHOV ,  Anton MEDVEDEV ,  Maksim RIABKO ,  Sang-Woo BAE ,  Akinori OKUBO ,  Sang-Min LEE ,  Seong-Keun CHO ,  Won-Don JOO

IPC: G01N21/88 ,  G01N21/21

Abstract: In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.