公开(公告)号：US20180358109A1

公开(公告)日：2018-12-13

申请号：US15850152

申请日：2017-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-jung Kwon ,  Kwang-il PARK ,  Seung-jun BAE ,  Eun-sung SEO

IPC: G11C29/50 ,  G11C5/14

CPC classification number: G11C29/50 ,  G11C5/145 ,  G11C5/147 ,  G11C7/1063 ,  G11C11/4074 ,  G11C29/02 ,  G11C29/04 ,  G11C29/12005 ,  G11C29/50004 ,  G11C29/50012 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/5004 ,  G11C2029/5006

Abstract: Memory devices and methods of operating the same are provided. The memory device including at least one internal circuit including a memory cell array and a peripheral circuit configured to drive the memory cell array, a monitor logic configured to monitor a current flowing into the at least one internal circuit and output a monitoring result, a detect logic configured to detect whether a leakage current flows in the at least one internal circuit based on the monitoring result, and output detected information regarding the leakage current, and diagnosis logic configured to diagnose an error in the at least one internal circuit based on the detected information.

公开(公告)号：US20160064190A1

公开(公告)日：2016-03-03

申请号：US14689559

申请日：2015-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin NOH ,  Kwang-min PARK ,  Eun-sung SEO ,  Young-chang SONG ,  Jae-young AHN ,  Hun-hyeong LIM ,  Ji-hoon CHOI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32779

Abstract: A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided.

Abstract translation: 一种基板处理装置，包括处理室，该处理室被配置为接收相对于处理室以水平方式定向并垂直布置的多个基板;处理气体供应单元，其配置成通过一个处理过程向处理室供应至少一个处理气体 气体供给喷嘴，沿着处理室的内壁沿着基板被排出的方向的工艺气体供给喷嘴，被配置为从处理室排出处理气体的排气单元和被配置为供给 可以提供在处理室的圆周方向上通过阻塞气体注入器的阻塞气体，从而可以控制处理室中的处理气体的流动。