公开(公告)号：US20240170486A1

公开(公告)日：2024-05-23

申请号：US18425476

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGHYUK YIM ,  KI-IL KIM ,  GIL HWAN SON ,  KANG ILL SEO

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/0922 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823871 ,  H01L29/0665 ,  H01L29/401 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/78645

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.

公开(公告)号：US20220375935A1

公开(公告)日：2022-11-24

申请号：US17387178

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JEONGHYUK YIM ,  KI-IL KIM ,  GIL HWAN SON ,  KANG ILL SEO

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8238

Abstract: Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.