公开(公告)号：US20250151258A1

公开(公告)日：2025-05-08

申请号：US18926393

申请日：2024-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINBUM KIM ,  DAE-JIN NAM ,  Hyojin Park ,  Soomin SON ,  GUIFU YANG ,  Kyeonggyu LEE ,  Inhae ZOH

IPC: H10B12/00

Abstract: Disclosed is a semiconductor device comprising a substrate that includes a device isolation pattern and an active region, a bit line that extends in a first direction on the substrate, a semiconductor pattern on the bit line, a growth mask layer on the bit line and having a sidewall in contact with the semiconductor pattern, a word line on the bit line and extending in a second direction that intersects the first direction, and a gate dielectric pattern between the word line and the semiconductor pattern. A top surface of the growth mask layer is at a level higher than that of a bottom surface of the semiconductor pattern.

公开(公告)号：US20240413086A1

公开(公告)日：2024-12-12

申请号：US18387997

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINBUM KIM ,  GUIFU YANG ,  Suk Yang ,  SANGMOON LEE ,  SUNGUK JANG ,  SUNG-HWAN JANG ,  Wonhee Choi

IPC: H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: Provided is a semiconductor device including a lower pattern layer including a first semiconductor material; a first conductivity-type doped pattern layer disposed on the lower pattern layer and including a semiconductor material doped with a first conductivity-type impurity; a source/drain pattern disposed on the first conductivity-type doped pattern layer and including a semiconductor material doped with a second conductivity-type impurity different from the first conductivity-type impurity; a channel pattern including semiconductor patterns connected between the source/drain patterns, stacked apart from each other, and including a second semiconductor material different from the first semiconductor material; and a gate pattern disposed on the first conductivity-type doped pattern layer and between the source/drain patterns, and surrounding the channel pattern.