公开(公告)号：US10192966B2

公开(公告)日：2019-01-29

申请号：US15692560

申请日：2017-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunho Jung ,  Jeongyun Lee ,  Taesoon Kwon ,  Kyungseok Min ,  Geumjung Seong ,  Bora Lim ,  A-Reum Ji ,  Seungsoo Hong

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06

Abstract: A semiconductor device can include a first active pattern on a substrate, the first active pattern including a plurality of first active regions that protrude from the substrate. A second active pattern can be on the substrate including a plurality of second active regions that protrude from the substrate. A first gate electrode can include an upper portion that extends over the first active pattern at a first height and include a recessed portion that extends over the first active pattern at a second height that is lower than the first height of the first gate electrode. A second gate electrode can include an upper portion that extends over the second active pattern at a first height and include a recessed portion that extends over the second active pattern at a second height that is lower than the first height of the second gate electrode. An insulation pattern can be located between, and directly adjacent to, the recessed portion of the first gate electrode and the recessed portion of the second gate electrode, the insulation pattern electrically isolating the first and second gate electrodes from one another.

公开(公告)号：US11430795B2

公开(公告)日：2022-08-30

申请号：US17192069

申请日：2021-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyewon Kim ,  Eunjung Kim ,  Geumjung Seong ,  Jay-Bok Choi

IPC: H01L27/108 ,  H01L21/762

Abstract: A semiconductor device includes a substrate including a cell region, a peripheral region, and a boundary region therebetween, a cell device isolation pattern on the cell region of the substrate to define cell active patterns, a peripheral device isolation pattern on the peripheral region of the substrate to define peripheral active patterns, and an insulating isolation pattern on the boundary region of the substrate, the insulating isolation pattern being between the cell active patterns and the peripheral active patterns, wherein a bottom surface of the insulating isolation pattern includes a first edge adjacent to a side surface of a corresponding one of the cell active patterns, and a second edge adjacent to a side surface of a corresponding one of the peripheral active patterns, the first edge being at a height lower than the second edge, when measured from a bottom surface of the substrate.