Abstract:
An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.
Abstract:
A photodiode includes a semiconductor substrate, a crystalline layer on the semiconductor substrate, an insulating pattern layer on the crystalline layer to define a plurality of holes exposing a top surface of the crystalline layer, a seed layer in the plurality of holes and directly on the crystalline layer, and a light absorption layer on the seed layer and the insulating pattern layer.
Abstract:
An optical memory module comprises one or more memory devices configured to store data, and one or more optical interface modules configured to perform optical communication between the memory devices and an external device. Each of the optical interface modules comprises an input-output light distribution unit configured to divide received light to produce transmission light and reception light, an electrical-to-optical conversion unit configured to perform optical modulation based on the transmission light and an electrical transmission signal to generate an optical transmission signal, and a coherent optical-to-electrical conversion unit configured to perform a coherent reception based on the reception light and an optical reception signal to generate an electrical reception signal.