公开(公告)号：US20240371445A1

公开(公告)日：2024-11-07

申请号：US18402356

申请日：2024-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： TaeHyun Kim ,  HYUNJOONG KIM ,  Jichull JEONG ,  EUIHYUN CHEON

IPC: G11C16/26 ,  G11C5/06 ,  G11C16/04

Abstract: An operating method of a circuit design system which includes a processor and a memory includes reading, at the processor, a circuit layout of a flash memory device including a page buffer from the memory, initializing, at the processor, a value of a first parameter of at least one transistor of the page buffer and a value of a second parameter of at least one voltage applied to the page buffer, performing, at the processor, circuit simulation on the page buffer using the initialized first and second parameters, and calculating, at the processor, a reward based on a result of the circuit simulation. The processor is configured to perform, in response to the reward being not greater than a threshold value, a subsequent action. The subsequent action includes adjust the value of the first parameter of the at least one transistor and the value of the second parameter of the at least one voltage, and perform subsequent circuit simulation on the page buffer using the adjusted first and second parameters.

公开(公告)号：US20240126971A1

公开(公告)日：2024-04-18

申请号：US18124992

申请日：2023-03-22

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： HYUNJOONG KIM ,  TAEHYUN KIM ,  JICHULL JEONG ,  EUIHYUN CHEON

IPC: G06F30/392

CPC classification number: G06F30/392

Abstract: A layout optimization system for correcting a target layout of a semiconductor process includes a deep reinforcement learning (DRL) module, a memory storing instructions, and a processor configured to execute the instructions to receive a target layout, generate, by the DRL module, a prediction layout by applying a simulation to the target layout, generate, by the DRL module, an optimal layout based on the prediction layout, and apply a size correction to at least one pattern of the prediction layout based on the optimal layout.