公开(公告)号：US09348521B2

公开(公告)日：2016-05-24

申请号：US14504568

申请日：2014-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Bin Yoon ,  Yeong-jae Woo ,  Dong-gi Lee ,  Kwang-Ho Kim ,  Hyuck-Sun Kwon

IPC: G06F12/00 ,  G06F3/06 ,  G06F13/16

CPC classification number: G06F3/0616 ,  G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F13/1668 ,  G06F2206/1014

Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

Abstract translation: 提供半导体存储装置及其节流方法。 半导体存储装置包括非易失性存储装置; 以及控制器，被配置为从主机接收写入命令，并且响应于写入命令将程序写入从主机接收到非易失性存储器设备的数据。 控制器在接收到来自主机的写入数据和/或在将写入数据编程到非易失性存储器件之后插入空闲时间。