公开(公告)号：US09626259B2

公开(公告)日：2017-04-18

申请号：US14337882

申请日：2014-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwan-Jin Yong ,  Donghyun Song ,  Janghwan Kim ,  Young-Goo Ko ,  Hyuck-Sun Kwon ,  Taek-Sung Kim ,  Kwang-Ho Kim ,  Byungjin Ahn ,  Dongjin Lee ,  Byungse So ,  Jong-Gyu Park ,  Kyoungsub Oh ,  Kwan-Jong Park ,  Jong-Soo Seo ,  Tae-Hwa Yoo ,  Min-Ho Kim

IPC: G06F11/20 ,  G06F1/30 ,  G06F11/14 ,  G06F1/28

CPC classification number: G06F11/2015 ,  G06F1/28 ,  G06F1/305 ,  G06F11/1441 ,  G06F2201/85

Abstract: A user device is provided. The device includes a main power supply, and an auxiliary power supply. The main power supply provides a main power. The auxiliary power supply cuts off the main power according to a power level of the main power supply and provides an auxiliary power upon Sudden Power-Off (SPO).

公开(公告)号：US09348521B2

公开(公告)日：2016-05-24

申请号：US14504568

申请日：2014-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Bin Yoon ,  Yeong-jae Woo ,  Dong-gi Lee ,  Kwang-Ho Kim ,  Hyuck-Sun Kwon

IPC: G06F12/00 ,  G06F3/06 ,  G06F13/16

CPC classification number: G06F3/0616 ,  G06F3/0613 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F13/1668 ,  G06F2206/1014

Abstract: A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

Abstract translation: 提供半导体存储装置及其节流方法。 半导体存储装置包括非易失性存储装置; 以及控制器，被配置为从主机接收写入命令，并且响应于写入命令将程序写入从主机接收到非易失性存储器设备的数据。 控制器在接收到来自主机的写入数据和/或在将写入数据编程到非易失性存储器件之后插入空闲时间。