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公开(公告)号:US09922846B2
公开(公告)日:2018-03-20
申请号:US15286828
申请日:2016-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seong-chan Han , Young-rock Lee , Chang-kun Kang , Chil-hoon Lee , Han-ju Kim
IPC: H01L21/56 , H01L21/48 , H01L23/00 , H01L25/065 , H01L25/16
CPC classification number: H01L21/563 , H01L21/4853 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/92 , H01L25/0655 , H01L25/16 , H01L2224/131 , H01L2224/16227 , H01L2224/26175 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/92125 , H01L2924/15323 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/014 , H01L2924/00014
Abstract: A method of manufacturing a semiconductor package includes preparing a package substrate including a semiconductor chip mounting region. A semiconductor chip is mounted in the semiconductor chip mounting region. A dam surrounding the semiconductor chip is formed. The formation of the dam includes depositing a first solution having a temperature below a set first temperature. A region under the semiconductor chip and a region defined by the dam are filled with an underfill by depositing the first solution having a temperature equal to or higher than the set first temperature.
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公开(公告)号:US20170103906A1
公开(公告)日:2017-04-13
申请号:US15286828
申请日:2016-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seong-chan Han , Young-rock Lee , Chang-kun Kang , Chil-hoon Lee , Han-ju Kim
CPC classification number: H01L21/563 , H01L21/4853 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/92 , H01L25/0655 , H01L25/16 , H01L2224/131 , H01L2224/16227 , H01L2224/26175 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/92125 , H01L2924/15323 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/014 , H01L2924/00014
Abstract: A method of manufacturing a semiconductor package includes preparing a package substrate including a semiconductor chip mounting region. A semiconductor chip is mounted in the semiconductor chip mounting region. A dam surrounding the semiconductor chip is formed. The formation of the dam includes depositing a first solution having a temperature below a set first temperature. A region under the semiconductor chip and a region defined by the dam are filled with an underfill by depositing the first solution having a temperature equal to or higher than the set first temperature.
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